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Naveen Kumar, M.
- Effect of Addition of Beetischolar_main Powder on Physical Properties and Acceptability of Defatted Soya Flour fortified Biscuits
Abstract Views :223 |
PDF Views:0
Authors
Affiliations
1 Central Institute of Post Harvest Engineering and Technology, Ludhiana - 141 004, Punjab, IN
2 Mar Athanasios College for Advanced Studies, Thiruvalla, Kerala, IN
1 Central Institute of Post Harvest Engineering and Technology, Ludhiana - 141 004, Punjab, IN
2 Mar Athanasios College for Advanced Studies, Thiruvalla, Kerala, IN
Source
The Indian Journal of Nutrition and Dietetics, Vol 46, No 2 (2009), Pagination: 59-69Abstract
Beetischolar_main is a nutritious vegetable and is an ideal component of a healthy diet. It has long been considered beneficial to the blood, heart and digestive system.
- Improvement of Breakdown Voltage in Quaternary in AlGaN HEMT with Different High-K Passivation Layer for Power Switching Applications
Abstract Views :144 |
PDF Views:4
Authors
Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
Source
Programmable Device Circuits and Systems, Vol 7, No 4 (2015), Pagination: 122-126Abstract
2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of the OFF-state breakdown voltage on the relative permittivity of the passivation layer εr and the thickness of the passivation layer d are studied. It is shown that as εr increases, the OFF-state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as εr increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if the εr of the insulator is higher. It is also shown that the OFF-state breakdown voltage increases as d increases because the electric field at the drain edge of the gate is weakened as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages. . It is well known that the introduction of a field plate enhances the power performance of AlGaN/GaN HEMTs because the socalled current collapse is reduced and the OFF-state breakdown voltage is increased. This increase in the OFF-state breakdown voltage occurs because the field plate reduces the electric field at the drain edge of the gate. However, the introduction of the field plate increases the parasitic capacitance and may degrade the high-frequency performance.- Numerical Study on Stress Distribution in Ultrasonically Welded Electrical Contacts used in Automotives
Abstract Views :188 |
PDF Views:97
Authors
Affiliations
1 Dept. of Production Engg., P.S.G. College of Tech., Coimbatore, IN
1 Dept. of Production Engg., P.S.G. College of Tech., Coimbatore, IN
Source
International Journal of Vehicle Structures and Systems, Vol 10, No 4 (2018), Pagination: 287-290Abstract
Numerical stress analysis while joining an electrical contact comprising of copper wire and copper sheet using ultrasonic metal welding process is vital in many of the automotive applications. During ultrasonic metal welding, shear and normal force act at the interface between the welded specimens. These forces are the result of ultrasonic vibrations transmitted by Sonotrode onto the welded specimens. In this work, the distribution of the stress developed at the interface and the correlation of the developed stress with strength of joint are studied. The theoretical stress values are determined using various levels of ultrasonic metal welding process parameters such as clamping force, vibration amplitude and weld time to validate the results of stress obtained from finite element analysis. The results of stress from numerical analysis are found to be in good agreement with that of results obtained from the theoretical calculations.Keywords
Ultrasonic Metal Welding, Finite Element Method, Stress Distribution, Vibration, Plastic Deformation.Full Text
References
- S. Elangovan, S. Semeer and K. Prakasan. 2009. Temperature and stress distribution in ultrasonic metal welding - An FEA based study, J. Material Processing Tech., 209(3), 1143-1150. https://doi.org/10.1016/j.jmatprotec.2008.03.032.
- Y. Ding and J.K. Kim. 2008. Numerical analysis of ultrasonic wire bonding: Part 2, Effects of bonding parameter on temperature rise, Microelectronics Reliability, 48(1), 149-157. https://doi.org/10.1016/j.microrel.2007.01.083.
- Y. Ding, J.K. Kim and P. Tong. 2006. Numerical analysis of ultrasonic wire bonding: Effects of bonding parameter on contact pressure and frictional energy, Mechanics of Materials, 38(1-2), 11-24. https://doi.org/10.1016/j.mechmat.2005.05.007.
- S. Elangovan, K. Prakasan, and V. Jaiganesh. 2010. Optimization of ultrasonic welding parameters for copper to copper joints using design of experiments, Int. J. Adv. Manuf. Tech., 51(1-4), 163-171. https://doi.org/10.1007/s00170-010-2627-1.
- E.D. Vries. 2004. Mechanics and Mechanism of Ultrasonic Metal Welding, PhD Thesis, The Ohio State University.
- V. Soundararajan, S. Zekovic and R. Kovacevic. 2005. Thermo-mechanical model with adaptive boundary conditions for friction stir welding of Al 6061, J. Machine Tools and Manuf., 45, 1577-1587. https://doi.org/10.1016/j.ijmachtools.2005.02.008.
- J. Zheng, A. Incea and L. Tang. 2018. Modelling and simulation of weld residual stresses and ultrasonic impact treatment of welded joints, Proc. Engg., 213, 36-47. https://doi.org/10.1016/j.proeng.2018.02.005.